Abstract
The epitaxial growth of InAs nanowires on an InAs (111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs (111) substrate. High quality InAs nanowires can be produced by this technique.
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Park, H.D., Prokes, S.M. & Cammarata, R.C. Growth of Epitaxial InAs Nanowires in a Simple Closed System. MRS Online Proceedings Library 901, 403 (2005). https://doi.org/10.1557/PROC-0901-Rb14-03
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DOI: https://doi.org/10.1557/PROC-0901-Rb14-03