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Growth of Epitaxial InAs Nanowires in a Simple Closed System

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Abstract

The epitaxial growth of InAs nanowires on an InAs (111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs (111) substrate. High quality InAs nanowires can be produced by this technique.

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Park, H.D., Prokes, S.M. & Cammarata, R.C. Growth of Epitaxial InAs Nanowires in a Simple Closed System. MRS Online Proceedings Library 901, 403 (2005). https://doi.org/10.1557/PROC-0901-Rb14-03

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  • DOI: https://doi.org/10.1557/PROC-0901-Rb14-03

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