Abstract
A thin nanocrystalline Pt interfacial layer (IL) was observed near the SrBi2Ta2O9(SBT)–Pt interface after crystallization treatment in a SBT–Pt–Ti ferroelectric capacitor. Apart from its Pt content, this IL also incorporated large numbers of Ti and O atoms, which arose from the Ti adhesion layer and the SBT film, respectively. These atoms reacted to form TiOx, which resulted in a volume expansion during the annealing process. This phenomenon led to a putative shear stress being exerted on the Pt layer. Under such stress and thermal conditions, we speculate that the nanocrystalline Pt IL developed from the Pt bottom electrode.
Similar content being viewed by others
References
J.F. Scott, C.A. Paz de Araujo: Ferroelectric memories. Science 246, 1400 1989
H.N. Al-Shareef, K.D. Gifford, S.H. Rou, P.D. Hren, O. Auciello, A.I. Kingon: Electrodes for ferroelectric thin films. Integrated Ferroelectr. 3, 321 1993
J.O. Olowolafe, R.E. Jones Jr., A.C. Campbell, R.I. Hegde, C.J. Mogab: Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions. J. Appl. Phys. 73, 1764 1993
S.T. Kim, H.H. Kim, M.Y. Lee, W.J. Lee: Investigation of Pt/Ti bottom electrodes for Pb(Zr,Ti)O3films. Jpn. J. Appl. Phys., Part I 36, 294 1997
H.J. Nam, H.H. Kim, W.J. Lee: The effects of the preparation conditions and heat-treatment conditions of Pt/Ti/SiO2/Si substrates on the nucleation and growth of Pb(Zr,Ti)O3films. Jpn. J. Appl. Phys., Part I 37, 3462 1998
H.J. Nam, D.K. Choi, W.J. Lee: Formation of hillocks in Pt/Ti electrodes and their effects on short phenomena of PZT films deposited by reactive sputtering. Thin Solid Films 371, 264 2000
S.H. Kim, D.J. Kim, J.P. Maria, A.I. Kingon, S.K. Streiffer, J. Im, O. Auciello, A.R. Krauss: Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9thin film properties. Appl. Phys. Lett. 76, 496 2000
S.Y. Kweon, S.K. Choi, S.J. Yeom, J.S. Roh: Platinum hillocks in Pt/Ti film stacks deposited on thermally oxidized Si substrate. Jpn. J. Appl. Phys., Part I 40, 5850 2001
W.W. Jung, S.K. Choi, S.Y. Kweon, S.J. Yeom: Platinum (100) hillock growth in a Pt/Ti electrode stack for ferroelectric random-access memory. Appl. Phys. Lett. 83, 2160 2003
K. Amanuma, T. Hase, Y. Miyasaka: Preparation and ferroelectric properties of SrBi2Ta2O9thin films. Appl. Phys. Lett. 66, 221 1995
C.A. Paz de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, J.F. Scott: Fatigue-free ferroelectric capacitors with platinum electrodes. Nature 374, 627 1995
C.C. Leu, C.H. Chien, C.C. Hsu, C.F. Leu, F.Y. Hsu, C.T. Hu: Pt nanocrystalline interfacial layer in an SBT/Pt/Ti ferroelectric capacitor. Electrochem. Solid-State Lett. 7, F67 2004
H. Sauer, S.A. Nepijko, M. Klimiankou: HRTEM and EELS characterization of TiO2nanoparticles in Ti-doped zeolite. Microsc. Microanal. 9, 192 2003
M. Kim, G. Duscher, N.D. Browning, K. Sohlberg, S.T. Pantelides, S.J. Pennycook: Non-stoichiometry and the electrical activity of grain boundaries in SrTiO3. Phys. Rev. Lett. 86, 4056 2001
S.G. Lee, K.T. Kim, Y.H. Lee: Characterization of lead zirconate titanate heterolayered thin films prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method. Thin Solid Films 372, 45 2000
R.E. Reed-Hill, R. Abbaschian: Physical Metallurgy Principles PWS-KENT Publishing Company Boston 1992 390–394
C.R. Brook: Heat Treatment, Structure and Properties of Nonferrous Alloys American Society for Metals Warrendale, PA 1982
R.E. Reed-Hill, R. Abbaschian: Physical Metallurgy Principles PWS-KENT Publishing Company Boston 1992 367–369
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Leu, CC. Nanocrystalline Pt interfacial layer formed by stress in a SrBi2Ta2O9–Pt–Ti ferroelectric capacitor. Journal of Materials Research 22, 1718–1725 (2007). https://doi.org/10.1557/JMR.2007.0207
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.2007.0207