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Atmospheric Pressure Chemical Vapor Deposition Growth Window for Undoped Gallium Antimonide

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Abstract

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 l/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-1 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

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Author notes

  1. A. Subekti

    Present address: Program Fisika Jurusan, MIPA, FKIP Universitas Jember, Jl. Kalimatan IIIy3, Jember, Indonesia

Authors and Affiliations

  1. Semiconductor Science and Technology Laboratories, Macquarie University, North Ryde, New South Wales, 2109, Australia

    A. Subekti, E. M. Goldys, Melissa J. Paterson, K. Drozdowicz-Tomsia & T. L. Tansley

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  1. A. Subekti
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  2. E. M. Goldys
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  3. Melissa J. Paterson
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  4. K. Drozdowicz-Tomsia
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  5. T. L. Tansley
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Subekti, A., Goldys, E.M., Paterson, M.J. et al. Atmospheric Pressure Chemical Vapor Deposition Growth Window for Undoped Gallium Antimonide. Journal of Materials Research 14, 1238–1245 (1999). https://doi.org/10.1557/JMR.1999.0169

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  • DOI: https://doi.org/10.1557/JMR.1999.0169

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