Abstract
We have grown Nb-doped TiO2 epitaxial films on (100) and (110)-oriented TiO2 rutile substrates by molecular beam epitaxy. Nb substitutionally incorporates at cation sites in the rutile lattice, forming NbxTi1−xO2 solid solutions. However, the crystal quality and surface roughness of the films depend strongly on the substrate orientation. Surface roughening and defect formation occur at lower values of x on (100) than on (110). This result is due to anisotropic changes in the metal-oxygen bond lengths within the rutile structure in going from TiO2 to NbO2; there are 1% and 12% changes in the metal atom to octahedron-base oxygen and metal atom to octahedron-vertex oxygen bond lengths, respectively. Every metal atom in the (100) growth surface has in-plane components of the 12% mismatch. However, only half of the metal atoms in the (110) growth plane have such components. Thus, there is substantially larger in-plane lattice mismatch when the growth surface is (100) compared to (110), resulting in surface roughening and formation of defects at a lower doping level for (100)-oriented NbxTi1−xO2 epitaxial films.
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Gao, Y., Chambers, S.A. Effect of substrate orientation on the crystal quality and surface roughness of Nb-doped TiO2 epitaxial films on TiO2. Journal of Materials Research 11, 1025–1029 (1996). https://doi.org/10.1557/JMR.1996.0128
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DOI: https://doi.org/10.1557/JMR.1996.0128