Abstract
Thermal and anodic oxide films of beta silicon carbide are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14% carbon. Dry oxide, on the other hand, has less than 3% carbon but is highly nonstoichiometric. The carbon content in the anodic oxide is 12%. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.
Similar content being viewed by others
References
W. C. Nieberding and J. Anthony Powell, IEEE Trans, on Industrial Electronics IE-29 (2), 103 (1982).
A. Addamino and J. S. Sprague, Appl. Phys. Lett. 44, 525 (1984).
S. Nishino, H. Suhara, and H. Matsunami, 15th Conference on Solid State Devices, 1983, p. 317.
P. Liaw and R. F. Davis, J. Electrochem. Soc. 132 (3), 642 (1985).
J. D. Parsons, R. F. Bunshah, and O. M. Stafsudd, Solid State Technology, Nov. 1985, p. 133.
S. Nishino, J. A. Powell, and H. A. Will, Appl. Phys. Lett. 42 (5), 460 (1983).
Handbook of Auger Electron Spectroscopy (Physical Electronics Industries, Inc., 1976), p. 14.
M. I. Chaudhry, “Ohmic Contacts and MOS Structures on Beta Silicon Carbide,” Ph.D. Dissertation, University of Notre Dame (1986).
K. Schwidtal, Surface Science 77, 523 (1987).
E. Fitzer and R. Ebi, in Silicon Carbide 1973, edited by R. C. Marshall, J. W. Faust, Jr., and C. E. Ryan (University of South Carolina Press, Columbia, SC, 1974), p. 321.
R. C. Ellis, Jr., in Silicon Carbide 1959, edited by J. R. O’Connor and J. Smiltens, p. 20.
M. Yoshimura, J. Kase, and S. Somiya, J. Mater. Res. 1 (1), 100 (1986).
R. W. Grant, S. P. Kowalczyk, J. R. Waldrop, and W. A. Hill, in The Physics of MOS Insulators, edited by G. Lucovsky, S. T. Pantelides, and F. L. Galeener (Pergamon, New York, 1980).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Chaudhry, M.I. A study of native oxides of β–SiC using Auger electron spectroscopy. Journal of Materials Research 4, 404–407 (1989). https://doi.org/10.1557/JMR.1989.0404
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1989.0404