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Investigation of quantum well and tunnel barrier growth by resonant tunneling

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Abstract

We present the first known systematic mapping of quantum well and tunnel barrier thicknesses in a resonant tunneling structure by transport measurements. The technique derives a 1 Å averaged resolution for quantum well and barrier thicknesses, independently for the quantum well and adjacent tunnel barriers. Contour maps of the structure reveal an asymmetric shallow ring growth structure for one of the epilayers. Current-voltage characteristics and temperature dependence of the resonant tunneling structures will also be discussed.

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Author notes

  1. A. E. Wetsel

    Present address: Harvard University, Cambridge, Massachusetts, USA

Authors and Affiliations

  1. Central Research Laboratory, Texas Instruments Incorporated, Dallas, Texas, 75265, USA

    M. A. Reed, J. W. Lee, R. K. Aldert & A. E. Wetsel

Authors
  1. M. A. Reed
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  2. J. W. Lee
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  3. R. K. Aldert
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  4. A. E. Wetsel
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Reed, M.A., Lee, J.W., Aldert, R.K. et al. Investigation of quantum well and tunnel barrier growth by resonant tunneling. Journal of Materials Research 1, 337–342 (1986). https://doi.org/10.1557/JMR.1986.0337

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  • DOI: https://doi.org/10.1557/JMR.1986.0337

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