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Y. Mei, C. Zhang, Z.V. Vardeny, and O.D. Jurchescu: Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature. MRS Communications (2015). doi: 10.1557/mrc.2015.21.
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The original article can be found online at https://doi.org/10.1557/mrc.2015.21
Authors contributed equally to the work.
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Mei, Y., Zhang, C., Vardeny, Z.V. et al. Erratum to: Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature–ERRATUM. MRS Communications 5, 303 (2015). https://doi.org/10.1557/mrc.2015.33
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DOI: https://doi.org/10.1557/mrc.2015.33