Abstract
We have investigated the changes in the cathode potential in a dc discharge of silane and hydrogen used to deposit the intrinsic layer of p-i-n type solar cells at deposition rates from 1 to 10Å/s with the superstrate temperature at 200°C and 250°C. Under plasma conditions that lead to higher deposition rates (5-10Å/s), fluctuations of the cathode potential which are suggestive of the formation and de-trapping of particulates in/from the plasma, are observed at 200°C but disappear at 250°C. Improvement of the temperature uniformity over the plasma region from 1.7°C/cm to 0.7°C/cm removes the fluctuations of the cathode potential even at 200°C, indicating that the particulates are formed predominantly at the plasma boundary. Consequently, the stability of solar cells with i-layers deposited at ~10Å/s in the center of the plasma region at the same superstrate temperature improved by 26% suggesting that multiple silicon containing molecules diffuse from the edge to the center of the plasma region.
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References
D.E. Carlson, G. Ganguly, G. Lin, M. Gleaton, M. Bennett, and R.R. Arya, Mater. Res. Soc. Symp. Proc. 664 (2001) A11.4
G. Ganguly, and A. Matsuda, Phys. Rev. B49 (1994) 10986
S. Okamoto, T. Takahama, M. Nishikuni, and S. Nakano, US Patent 5114498 (1992)
R. Hayashi, T. Takagi, G. Ganguly, M. Fukawa, M. Kondo and A. Matsuda, Proc. 2nd. World Conference on PVSEC (European Commission, Ispra, Italy, 1998) p-929.
A. Matsuda, S. Yokohama, and K. Tanaka, Appl. Phys. Lett. 53 (1988) 1489
G. Ganguly, and A. Matsuda, Appl. Phys. Lett. 64 (1994) 3581
M. Takai, T. Nishimoto, M. Kondo, and A. Matsuda, Appl. Phys. Lett. 77 (2000) 2828
T. Takagi, R. Hayashi, G. Ganguly, M. Kondo, and A. Matsuda, Thin Solid Films 345
K. Koga, Y. Matsuoka, K. Tanaka, M. Shiratani, and Y. Watanabe, Appl. Phys. Lett. 77 (2000) 196
A. Bouchoule, A. Plain, L. Boulefendi, J. Ph. Blondeau, and C. Laure, J. Appl. Phys. 70 (1991) 1991
G. Ganguly, J. Newton, D.E. Carlson and R.R. Arya, J. Non-Cryst. Solids 299–302 (2002) 53; G. Ganguly, G. Wood, J.N. Newton, M. Bennett, D.E. Carlson and R.R. Arya Mater. Res. Soc. Symp. Proc. 715 (2002) 55.
A. A. Friedman, L. Boulefendi, T. Hbid, B.V. Potapkin, and A. Bouchoule, J. Appl. Phys, 79 (1996) 1303
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Ganguly, G., Bennett, M.S., Carlson, D.E. et al. Effect of Temperature and Temperature Uniformity on Plasma and Device Stability. MRS Online Proceedings Library 762, 104 (2002). https://doi.org/10.1557/PROC-762-A10.4
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DOI: https://doi.org/10.1557/PROC-762-A10.4