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Three-Dimensional Modeling of the High Pressure Organometallic Chemical Vapor Deposition of InN using Trimethylindium and Ammonia

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Abstract

A physico-chemical model of the High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) process that describes three dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors is presented. A reduced-order model of the Organometallic Chemical Vapor Deposition of indium nitride (InN) from trimethylindium In(CH3)3 or TMI and ammonia (NH3) at elevated pressures has been developed and tested using the computational fluid dynamics code, CFD-ACE+. The model describes the flow dynamics coupled to chemical reactions and transport in the flow channel of the Compact Hard Shell Reactor, as a function of substrate temperature, total pressure and centerline flow velocity.

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Acknowledgments

The authors wish to acknowledge the helpful discussions and input provided by Nikolaus Dietz, Beatriz Cardelino, Craig E. Moore, Sam Lowry, Sandip Mazumder and Ning Zhou in the development of this work. Also, we would like to acknowledge the support of this work by NASA Collaborative Agreement NCC8-95 and NASA Grant NAG8-1686.

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McCall, S.D., Bachmann, K.J. Three-Dimensional Modeling of the High Pressure Organometallic Chemical Vapor Deposition of InN using Trimethylindium and Ammonia. MRS Online Proceedings Library 693, 19–24 (2001). https://doi.org/10.1557/PROC-693-I3.13.1

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