Abstract
A physico-chemical model of the High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) process that describes three dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors is presented. A reduced-order model of the Organometallic Chemical Vapor Deposition of indium nitride (InN) from trimethylindium In(CH3)3 or TMI and ammonia (NH3) at elevated pressures has been developed and tested using the computational fluid dynamics code, CFD-ACE+. The model describes the flow dynamics coupled to chemical reactions and transport in the flow channel of the Compact Hard Shell Reactor, as a function of substrate temperature, total pressure and centerline flow velocity.
Similar content being viewed by others
References
J. MacChesney, P. M. Bridenbough and P. B. O'Connor, Mater. Res. Bull. 5 (1970) 783.
S. Krukowski, A. Witek, J. Adamczyk, J. Jun, M. Bockowski, I. Grzegory, B. Lucznik, G. Nowak, M. Wroblewski, A. Presz, S. Gierlotka, S. Stelmach, B. Palosz, S. Porowski and P. Zinn, J. Phys. Chem. Solids. 59 (1998) 289.
K. J. Bachmann, S. McCall, S. LeSure, N. Sukidi and F. Wang, J. of Japan Society of Microgravity Applications, 15 (1998) 436.
CFD-ACE User's Manual, Version 6.4 (CFDRC, Huntsville, AL, USA, 2000).
K. J. Bachmann, H. T. Banks, C. Hopfner, G. M. Kepler, S. LeSure, S. D. McCall, J. S. Scroggs, Mathematical and Computer Modelling, 29 (1999) 65.
N. Dietz, S. McCall, K.J. Bachmann, “Real-time optical monitoring of flow kinetics and gas phase reactions under high-pressure OMCVD conditions”, Proceedings of the Microgravity Conference 2000, Huntsville, AL. June 6-8, NASA/CP-2001-210827, (2001) 176.
R. B. Byrd, W. E. Stewart, E. N. Lightfoot, Transport Phenomena. New York, NY: John Wiley & Sons, 1960.
B. H. Cardelino, C. E. Moore, C. A. Cardelino, D. O. Frazier, and K. J. Bachmann, J. Phys. Chem. A 105 (2000) 849.
N. I. Buchan and J. M. Jasinski, J. of Crystal Growth 106 (1988) 227.
M. G. Jacko and S. J. W. Price, Can. J. chem. 42 (1964) 1198.
J. Haigh and S. O'Brien, J. Crystal Growth 68 (1984) 550.
B. H. Cardelino, C. A. Cardelino, D. O. Frazier, A. Krishnan, S. Lowry, C. Moore, N. Zhou, and K. J. Bachmann, Proc. SPIE 3625 (1999) 447.
K. J. Bachmann, B. H. Cardelino, C. E. Moore, C. A. Cardelino, N. Sukidi, and S. McCall, In Situ Process Diagnostics and Modelling. Symposium. Materials Research Society, Warrendale, PA (1999) 59.
R. D. Kenner, F. Rohrer and F. Stuhl, J. Chem. Phys. 86(4) (1987) 2036.
Acknowledgments
The authors wish to acknowledge the helpful discussions and input provided by Nikolaus Dietz, Beatriz Cardelino, Craig E. Moore, Sam Lowry, Sandip Mazumder and Ning Zhou in the development of this work. Also, we would like to acknowledge the support of this work by NASA Collaborative Agreement NCC8-95 and NASA Grant NAG8-1686.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
McCall, S.D., Bachmann, K.J. Three-Dimensional Modeling of the High Pressure Organometallic Chemical Vapor Deposition of InN using Trimethylindium and Ammonia. MRS Online Proceedings Library 693, 19–24 (2001). https://doi.org/10.1557/PROC-693-I3.13.1
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-693-I3.13.1