Abstract
We propose a materials design to fabricate the transparent and half-metallic ferromagnets in V-, Cr-, Mn+hole, Fe-, Co-, and Ni-doped ZnO based upon ab initio electronic structure calculation. Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. The ferromagnetic state becomes more stable by electron doping in Fe-, Co- or Ni-doped ZnO. From the point of practical applications, it is feasible to realize the half-metallic ferromagnets with high Curie temperature, because n-type ZnO is easily available. We propose the design of new functional devices, such as spin-FET, photo-induced ferromagnets, and spin-injection devices using negative electron affinity in the wide band gap semiconductors.
Similar content being viewed by others
References
T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38 (1999) L166.
M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. 38 (1999) L1205.
K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555.
K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 40 (2001) L334.
H. Akai, Phys. Rev. Lett. 81 (1998) 3002.
H. Akai and P. H. Dederichs, Phys. Rev. B47(1993) 8739.
H. Akai, M. Akai, S. Bluegel, B. Drittler, H. Ebert, K. Terakura, R. Zeller and P. H. Dederichs, Prog. Theor. Phys. Suppl. 101 (1990) 11.
R. W. G. Wyckoff, “Crystal Structures” (Wiley, New York, 1986) 2nd. ed., Vol. 1, p. 112.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sato, K., Katayama-Yoshida, H. Materials and Device Design with ZnO-Based Diluted Magnetic Semiconductors. MRS Online Proceedings Library 666, 46 (2000). https://doi.org/10.1557/PROC-666-F4.6
Published:
DOI: https://doi.org/10.1557/PROC-666-F4.6