Abstract
We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.
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Jiang, L., Lyou, J.H., Rane, S. et al. Open-Circuit Voltage Physics in Amorphous Silicon Solar Cells. MRS Online Proceedings Library 609, 183 (1999). https://doi.org/10.1557/PROC-609-A18.3
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DOI: https://doi.org/10.1557/PROC-609-A18.3