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Field Emission from Low Temperature Carbon Coated Silicon Tips

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Abstract

Field emission from silicon tips with carbon coatings deposited by VHF CVD at low temperature, Ts=225°C, has been studied. Emission was measured from both single tips and tip arrays. Structure and electronic properties of the films have been characterized. Significant effects due to pregrowth plasma treatment of the sample surface were observed on microstructure and emission characteristics. Optimized carbon coatings on silicon tips increased emission current by about two orders and reduced the threshold field to 0.1 V/μm.

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Authors and Affiliations

  1. A.F.Ioffe Phys.-Technical Institute, St.-Petersburg, 194021, Russia

    A. I. Kosarev, A. J. Vinogradov & M. V. Shutov

  2. Institute of Crystallography, Moscow, 117333, Russia

    V. V. Zhirnovo & E. I. Givargizov

  3. Moscow State Academy of Fine Chemical Technology, Moscow, 117571, Russia

    L. V. Bormatova

  4. Sandia National Laboratories, CA, 94550, USA

    T. E. Felter

Authors
  1. A. I. Kosarev
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  2. V. V. Zhirnovo
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  3. A. J. Vinogradov
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  4. M. V. Shutov
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  5. L. V. Bormatova
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  6. E. I. Givargizov
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  7. T. E. Felter
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Kosarev, A.I., Zhirnovo, V.V., Vinogradov, A.J. et al. Field Emission from Low Temperature Carbon Coated Silicon Tips. MRS Online Proceedings Library 509, 89 (1997). https://doi.org/10.1557/PROC-509-89

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  • DOI: https://doi.org/10.1557/PROC-509-89

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