Abstract
Infrared absorption data of various Si:H samples involving several series of a-Si:H films as well as fuc-Si:H and c-Si:H samples were analyzed to obtain ratios of the absorption strengths A of the Si-H stretching modes at 2000 and 2100 cm-1 and of the Si-H wagging mode at 640 cm-1. Hydrogen effusion measurements were used to obtain the absolute values of A. The results suggest essentially equal absorption strengths for the two Si-H stretching modes and a ratio of wagging and stretching absorption strengths independent of hydrogen density NH. Films with predominant 2100 cm-1stretching absorption show a stronger sample dependence of A than observed for samples with predominant 2000 cm-1absorption. A slight increase of the absorption strength of the Si-H wagging and stretching modes with rising hydrogen concentration is observed for a-Si:H films and is attributed to the decrease of the refractive index. Enhanced A values of fuc-Si:H samples compared to a-Si:H samples point to the presence of molecular hydrogen.
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Acknowledgement
Financial support by BMBF, technical assistance by F. Pennartz, R. Schmitz, R. von de Berg and stimulating discussions with F. Finger, J. F6lsch and H. Wagner are gratefully acknowledged.
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Beyer, W., Abo Ghazala, M.S. Absorption Strengths of Si-H Vibrational Modes in Hydrogenated Silicon. MRS Online Proceedings Library 507, 601–606 (1998). https://doi.org/10.1557/PROC-507-601
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DOI: https://doi.org/10.1557/PROC-507-601