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The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

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Abstract

Nucleation and growth of GaN under Ga-rich conditions by molecular beam epitaxy using a nitrogen rf plasma source is shown to result in both a smoother GaN surface and a reduced inversion domain content. In addition, preliminary results of the dramatic effect of atomic hydrogen on growth kinetics for Ga-rich growth are presented.

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Authors and Affiliations

  1. Physics Department, West Virginia University, Morgantown, WV, 26506, USA

    S. L. Buczkowski, Zhonghai Yu, N. C. Giles & T. H. Myers

  2. Chemistry Department, West Virginia University, Morgantown, WV, 26506, USA

    M. Richards-Babb

  3. Xerox Palo Alto Research Center, Palo Alto, CA, 94304, USA

    L. T. Romano

Authors
  1. S. L. Buczkowski
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  2. Zhonghai Yu
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  3. M. Richards-Babb
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  4. N. C. Giles
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  5. L. T. Romano
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  6. T. H. Myers
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Corresponding author

Correspondence to T. H. Myers.

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Buczkowski, S.L., Yu, Z., Richards-Babb, M. et al. The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions. MRS Online Proceedings Library 449, 197–202 (1996). https://doi.org/10.1557/PROC-449-197

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  • DOI: https://doi.org/10.1557/PROC-449-197

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