Skip to main content
SpringerLink
Log in

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haydl, and J. Schneider, Appl. Phys. Lett. 46, 381 (1985).

    Article  CAS  Google Scholar 

  2. J. Michel, L. J. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y. -H. Xie, J. M. Poate, and L. C. Kimerling, J. Appl. Phys. 70 2672 (1991).

    Article  CAS  Google Scholar 

  3. F. Priolo, G. Franzò, S. Coffa, A. Polman, S. Libertino, R. Barklie, and D. Carey, J. Appl. Phys. 78 3874 (1995).

    Article  CAS  Google Scholar 

  4. G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Carnera, Appl. Phys. Lett. 64 2235 (1994).

    Article  Google Scholar 

  5. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 64 2842 (1994).

    Article  CAS  Google Scholar 

  6. M. Jaumann, J. Stimmer, P. Schittenhelm, J. F. Niitzel, G. Abstreiter, E. Neufeld, B. Holländer, and Ch. Buchai, Appl. Surf. Sci. (to be published).

  7. J. Stimmer, A. Reittinger, J. F. Nützel, G. Abstreiter, H. Holzbrecher, and Ch. Buchal, Appl. Phys. Lett, (to be published)

  8. R. Sauer, J. Weber, J. Stolz, E. R. Weber, K. -H. Küsters, and H. Alexander, Appl. Phys. A 36 1 (1985).

    Article  Google Scholar 

Download references

Acknowledgements

The erbium-oxygen-doped silicon diodes were grown in a converted Riber MBE 32 P system which was provided to us by Prof. H. Kurz of RWTH Aachen, Germany. The project is supported financially by the Volkswagen Stiftung via Photonik programme and by the Bayerische Forschungsstiftung via FOROPTO.

Author information

Authors and Affiliations

  1. Walter Schottky Institut, Techn. Univ. Munich, D-85748, Garching, Germany

    J. Stimmer, A. Reittinger & G. Abstreiter

  2. ZCH, Forschungszentrum Jülich GmbH, D-52425, Jülich, Germany

    H. Holzbrecher

  3. ISI 2, Forschungszentrum Jülich GmbH, D-52425, Jülich, Germany

    Ch. Buchal

Authors
  1. J. Stimmer
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Reittinger
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. Abstreiter
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Holzbrecher
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Ch. Buchal
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J. Stimmer.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Stimmer, J., Reittinger, A., Abstreiter, G. et al. Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE. MRS Online Proceedings Library 422, 15–20 (1996). https://doi.org/10.1557/PROC-422-15

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-422-15

Search

Navigation