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Picosecond Dynamics of Laser Annealing

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Abstract

We report simultaneous measurements of time resolved reflection and transmission of low intensity 1.06 µm, 35 ps pulses subsequent to excitation of 50 KeV, 1016 cm−2 boron implanted silicon by 0.53 µm 35 ps pulses of varying energy densities. The samples are examined by optical and scanning electron microscopy in conjunction with defect etching. These data are discussed from the point of view of both the thermal melting model and plasma model.

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, Rice University, Houston, TX, 77001, USA

    Dae M. Kim

  2. Semiconductor Research and Development Lab., Texas Instruments, P.O. Box 225012, Dallas, TX, 75265, USA

    Rajiv R. Shah & D. L. Crosthwait

  3. Physics Department, University of Essen, Essen, Federal Republic of Germany

    D. Von Der Linde

Authors
  1. Dae M. Kim
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  2. Rajiv R. Shah
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  3. D. Von Der Linde
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  4. D. L. Crosthwait
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Kim, D.M., Shah, R.R., Von Der Linde, D. et al. Picosecond Dynamics of Laser Annealing. MRS Online Proceedings Library 4, 85–90 (1981). https://doi.org/10.1557/PROC-4-85

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  • DOI: https://doi.org/10.1557/PROC-4-85

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