Abstract
A compact negative metal ion beam source for direct low energy metal ion beam depositions studies in ultra high vacuum (UHV) environment, has been developed. The ion source is based on SKION’s Solid State Ion Beam Technology. The secondary negative metal ion beam is effectively produced by primary cesium positive ion bombardment (negative ion yield varies from 0.1-0.5 for carbon). The beam diameter is in the range of 0.2∼3.0 cm depending on the focusing and ion beam energy. The ion source produces negative ion currents of about 0.8 mA/cm2. The energy spread of the ion beam is less then ±5% of the ion beam energy. The energy of negative metal ion beam can be independently controlled in the range of 10-300 eV. Due to the complete solid state ion technology , the source can be operated while maintaining chamber pressures of less then 10-10 Torr.
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References
G D. Alton, Rev. Sci. Instrum. 63 4, 2450 (1992).
Yoshiharu, Rev. Sci. Instrum. 63 4, 2357 (1992).
J. Ishikawa, Rev. Sci. Instrum. 63 4, p.2368 (1992).
A.Pargellis and M. Seidl, J. Vac. Sci. Technol. A1 3, 1388 (1983).
G. S. Tompa, W.E. Carr and M. Seidl, Appl. Phys. Lett. 48 16, 1048 (1986).
Y. W. Ko, Y. O. Ahn, M. H. Sohn, Y. Park and S. I. Kim, presented at 1995 MRS Fall Meeting, Boston, MA, 1995.
S. I. Kim and M. Seidl, J. Vac. Sci. Technol. A7 3, 5671 (1989).
S. I. Kim and M. Seidl, J. Appl. Phys. 67 6, 2704 (1990).
S. I. Kim, Y. O. Ahn and M. Seidl, Rev. Sci. Instrum. 63 12, 5671 (1992).
W. Herrmannfeldt, R. Becker and I. Brodie, SLAC-PUB-5217, 1990.
D. A. Dahl and J. E. Delmore, SIMION Ver. 4.0, Idaho Natl. Eng. Lab., EG&G Idaho INC.
J. Ishikawa, presented at 6th. International Conference on Ion Source, Sep. 1995, to be published in Rev. Sci. Instrum.
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Park, Y., Ko, Y.W., Sohn, M.H. et al. Design of a Compact Negative Metal Ion Beam Source for Surface Studies. MRS Online Proceedings Library 396, 623 (1995). https://doi.org/10.1557/PROC-396-623
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DOI: https://doi.org/10.1557/PROC-396-623