Abstract
The diffusion of aluminum in silicon carbide during high-temperature A1+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 x 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 x 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.
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Suvorov, A.V., Usov, I.O., Sokolov, V.V. et al. Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide. MRS Online Proceedings Library 396, 239 (1995). https://doi.org/10.1557/PROC-396-239
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DOI: https://doi.org/10.1557/PROC-396-239