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Hydrogen Bonding Configurations Determined From H Evolution

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Abstract

Hevolution spectra were measured for hydrogenated Amorphous silicon (a-Si:H) films of varying thickness. A low temperature evolution peak at about 380 °C was determined to arise from a surface monolayer. The bulk limited main peak of the evolution spectrum arises from a very narrow range of binding energies (<0.2 eV). The evolution spectra of a-Si:H, hydrogenated polycrystalline Si, and c-Si containing platelet structures are virtually identical in both size and temperature of the various peaks. Less than 5% of the H is released in an evolution peak occurring at about 800 °C, a peak possibly due to H bound at isolated dangling bonds.

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Authors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304, USA

    W. B. Jackson, N. H. Nickel, N. M. Johnson, F. Pardo & P. V. Santos

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  1. W. B. Jackson
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  2. N. H. Nickel
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  3. N. M. Johnson
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  4. F. Pardo
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  5. P. V. Santos
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Jackson, W.B., Nickel, N.H., Johnson, N.M. et al. Hydrogen Bonding Configurations Determined From H Evolution. MRS Online Proceedings Library 336, 311–316 (1994). https://doi.org/10.1557/PROC-336-311

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