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A One-Micrometer Channel Length α-Si Thin-Film Field-Effect Transistor

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Abstract

A new method of fabricating short channel α-Si TFTs has been developed. One-micrometer channel length α-Si thin-film field effect transistors have been fabricated and tested. Threshold voltages as low as 1.9V and field-effect mobilities as high as 1 cm 2/V-sec are reported. These devices were fabricated by techniques compatible with the production of large area liquid crystal displays.

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Authors and Affiliations

  1. Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan, 48084, USA

    Z. Yaniv, M. Vijan & V. Cannella

  2. Electrical and Computer Engineering Department, University of Michigan, Ann Arbor, Michigan, 48109, U.S.A.

    G. Hansell

Authors
  1. Z. Yaniv
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  2. G. Hansell
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  3. M. Vijan
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  4. V. Cannella
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Yaniv, Z., Hansell, G., Vijan, M. et al. A One-Micrometer Channel Length α-Si Thin-Film Field-Effect Transistor. MRS Online Proceedings Library 33, 293–296 (1984). https://doi.org/10.1557/PROC-33-293

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  • DOI: https://doi.org/10.1557/PROC-33-293

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