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Large Area Position Sensitive Detector Based on Amorphous Silicon Technology

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Abstract

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/A1 structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor’s corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.

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Acknowledgments

The authors want to tank all those who have participated in the development of the large area PSD at New University of Lisbon, CEMOP-UNINOVA, EID, SMP and S1STEL and specially to: M. Sanematsu, F. Soares, J. Fidalgo, U. Sousa, A. Campos, S. Soutinho and F. Godinho for their technical help. Part of this work have been supported by Programa PRODEP/SEAD, PEDIP no 0038 and Funda Luso Americana para o Desenvolvimento.

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Authors and Affiliations

  1. Dept. Science Materials, Faculty of Science and Technology, New University of Lisbon, 2825, Monte de Caparica, Portugal

    E. Fortunato, M. Vieira, L. Ferreira, C. N. Carvalho, G. Lavareda & R. Martins

  2. EID, Optoelectronic Dept., Quinta dos Medronheiros, 2825, Monte de Caparica, Portugal

    L. Ferreira

Authors
  1. E. Fortunato
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  2. M. Vieira
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  3. L. Ferreira
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  4. C. N. Carvalho
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  5. G. Lavareda
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  6. R. Martins
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Fortunato, E., Vieira, M., Ferreira, L. et al. Large Area Position Sensitive Detector Based on Amorphous Silicon Technology. MRS Online Proceedings Library 297, 981–986 (1993). https://doi.org/10.1557/PROC-297-981

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  • DOI: https://doi.org/10.1557/PROC-297-981

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