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The Formation of TiN-Encapsulated Cu Interconnects

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Abstract

A TiN(0)-encapsulated copper structure was made by annealing a Cu-10 at%Ti alloy film evaporated on a SiO2/Si(100) substrate in N2 or NH3 ambiente. During thermal cycling, the tensile stress in the nitridated films is in the range of 200 to 800 MPa. The stress relaxation depends on the cooling cycle and the presence of interlayer between film and substrate. A fast heating rate (70°C/min.) to 550°C in an NH3 ambient can effectively suppress the formation of Cu3Ti and enhance the TiNx(0) formation near the surface of the copper film. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance. A fully encapsulated Cu fine line structure can be achieved by annealing a Cu-10at%Ti alloy film in an Ar ambient at 550°C and then in an NH3 ambient at 550°C to form TiOx/Ti5Si3 adhesion layer and TiN(O) layer, respectively.

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Authors and Affiliations

  1. Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA

    Jian Li, J. W. Strane, S. W. Russell & J. W. Mayer

  2. National Nano fabrication Facility, Cornell Univeristy, Ithaca, NY, 14853, USA

    P. Chapman

  3. School of Electrical Engineering, Cornell University, Ithaca, NY, 14853, USA

    Y. Shacham-Diamand

Authors
  1. Jian Li
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  2. J. W. Strane
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  3. S. W. Russell
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  4. P. Chapman
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  5. Y. Shacham-Diamand
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  6. J. W. Mayer
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Li, J., Strane, J.W., Russell, S.W. et al. The Formation of TiN-Encapsulated Cu Interconnects. MRS Online Proceedings Library 260, 605–610 (1992). https://doi.org/10.1557/PROC-260-605

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  • DOI: https://doi.org/10.1557/PROC-260-605

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