Abstract
Although silicon-on-insulator (SOI) materials made by standard energy (150-200 keV) SIMOX processes have shown great promise for meeting the needs of radiation hard microelectronics, there are still problems relating to the radiation hardness and economic viability of standard SIMOX. A low energy SIMOX (LES) process reduces cost and improves radiation hardness and increased throughput of any implanter because much smaller doses are required. In addition, the process is uniquely able to produce high quality thin SIMOX structures that are of particular interest for fully depleted device structures. In this paper, we address the formation of high quality ultrathin SIMOX structures by low energy implantation.
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Acknowledgement
We are very grateful to Dr. Walter Shedd at RADC for his direction and support in this work. We would also like to thank D.L. Perry and Dr. P. Ling for XTEM work, and K.C. Wills for assistance with the preparation of the manuscript.
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This work was supported in part by the Department of Defense, Rome Air Development Center/ESR, under contract no. F19628-90-C-0081.
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Namavar, F., Cortesi, E., Buchanan, B. et al. Ultrathin Soi Structures by Low Energy Oxygen Implantation. MRS Online Proceedings Library 235, 109–114 (1991). https://doi.org/10.1557/PROC-235-109
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DOI: https://doi.org/10.1557/PROC-235-109