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Two-Color Picosecond Measurements on Electron-Hole Plasmas Close to the Melting Phase Transition

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Abstract

We demonstrate a novel technique to study in detail the picosecond dynamics of semiconductors close to the melting phase transition. A variable-energy IR pulse (1.06 μm) is used to melt Si or GaAs samples via free carrier absorption (FCA) in the dense and hot electron-hole plasma (EHP) produced by a preceding visible (532 nm) pulse. By varying the delay between the pulses and their relative intensities, we are able to verify the Lietoila-Gibbons model for pulsed laser heating, and to measure in detail important parameters of the EHP over a wide range of experimental conditions.

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Authors and Affiliations

  1. Edward L. Ginzton Laboratory, Stanford University, Stanford, California, 94305, USA

    P. M. Fauchet & A. E. Siegman

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  1. P. M. Fauchet
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  2. A. E. Siegman
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Fauchet, P.M., Siegman, A.E. Two-Color Picosecond Measurements on Electron-Hole Plasmas Close to the Melting Phase Transition. MRS Online Proceedings Library 23, 63–68 (1983). https://doi.org/10.1557/PROC-23-63

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  • DOI: https://doi.org/10.1557/PROC-23-63

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