Abstract
A four-circle diffractometry technique is used to determine the heteroepitaxial relations of VO2 and TiO2 thin films grown by an MOCVD technique on sapphire (0001) and (1120) surfaces. The use of a reflective geometry eliminates special sample preparation of the sample for the x-ray diffraction measurements. The distribution of epitaxial domains is found to depend strongly on the symmetry of the underlying substrate.
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Work performed under DOE contract W-31-109-Eng-38
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You, H., Chang, H.L.M., Chiarello, R.P. et al. X-Ray Diffraction Study of Heteroepitaxy of MOCVD Grown TiO2 and VO2 Films on Sapphire Single Crystals. MRS Online Proceedings Library 221, 181–185 (1991). https://doi.org/10.1557/PROC-221-181
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DOI: https://doi.org/10.1557/PROC-221-181