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Thermal Behaviour of Au/Pd/GaAs Contacts

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Abstract

Au(85nm)/Pd(55nm)/GaAs(100) samples were heat treated in the 325–425°C temperature range. The annealed samples have been investigated using Rutherford Backscattering Spectrometry, Auger Electron Spectroscopy and Transmission Electron Microscopy. The gold layer remained largely unreacted up to 300°C. Significant Pd diffusion into GaAs consuming a 50–60 nm thick layer of GaAs.is evident in the case of sample annealed at 325°C and a slight Au diffusion is also noticeable. In the sample annealed at 350°C the spreading of palladium was very quick. A strong reaction took place between the GaAs and the metallization in the case of sample heat treated at 375°C. At this temperature we have identified the PdGa phase using electron diffraction.

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Acknowledgments

The authors are grateful to Cs.Hajdu for the RBS measurements and to A.Barna and Gy.Vincze for help and useful discussion.

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Authors and Affiliations

  1. Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325, Budapest, P.O.Box 76, Hungary

    B. Pécz, R. Veresegyházy, I. Mojzes, G. Radnóczi & A. Sulyok

  2. Institute of Radio Engineering and Electronics of the Czechoslovak Academy of Sciences, Lumumbova 1, 18251, Prague 8, Czech Republic

    V. Malina

Authors
  1. B. Pécz
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  2. R. Veresegyházy
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  3. I. Mojzes
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  4. G. Radnóczi
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  5. A. Sulyok
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  6. V. Malina
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Pécz, B., Veresegyházy, R., Mojzes, I. et al. Thermal Behaviour of Au/Pd/GaAs Contacts. MRS Online Proceedings Library 181, 319–324 (1990). https://doi.org/10.1557/PROC-181-319

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  • DOI: https://doi.org/10.1557/PROC-181-319

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