Abstract
InGaP layers grown on (111)Ga and (111)As GaAs substrate faces are investigated by microRaman spectroscopy, microphotoluminescence and cathodoluminescence. The growth on these polar faces benefits disorder with respect to the layers grown on (001) faces. It is shown that both (111)Ga and (111)As faces result in disordered InGaP layers. While the layers grown on (111)As faces present inhomogeneous compositions, the layers grown on (111)Ga faces present homogeneous compositions close to lattice matching and are almost disordered.
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Martínez, O., Hortelano, V., Parra, V. et al. InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells. MRS Online Proceedings Library 1167, 304 (2009). https://doi.org/10.1557/PROC-1167-O03-04
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DOI: https://doi.org/10.1557/PROC-1167-O03-04