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Lattice-distortion-induced amorphization in indented [110] silicon

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Abstract

High-resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.

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Authors and Affiliations

  1. State Key Laboratory For Fatigue and Fracture of Materials and Laboratory of Atomic Imaging of Solids, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang, 110015, People’s Republic of China

    Y. Q. Wu & Y. B. Xu

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  1. Y. Q. Wu
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  2. Y. B. Xu
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Wu, Y.Q., Xu, Y.B. Lattice-distortion-induced amorphization in indented [110] silicon. Journal of Materials Research 14, 682–687 (1999). https://doi.org/10.1557/JMR.1999.0093

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  • DOI: https://doi.org/10.1557/JMR.1999.0093

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