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Mechanism of TiN barrier-metal oxidation in a ferroelectric random access memory

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Abstract

In the stacked structure of PbZr1-xTixO3(PZT)/Pt/TiN/poly-Si for a ferroelectric random access memory (RAM), the mechanism of TiN barrier-metal oxidation was investigated by transmission electron microscopy (TEM). In the cross-sectional TEM images of PZTyPtyTiNySi, titanium oxide was observed beneath the Pt grain boundary. The oxygen was diffused through the Pt grain boundary during the heat treatment in an oxygen atmosphere for crystallization of PZT films. The annealing of the TiN film in ammonia resulted in the suppression of the oxidation during the crystallization annealing of PZT. The minimum required Pt film thickness to protect TiN from oxidation can be reduced from 200 nm to 100 nm.

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Acknowledgment

We are grateful to Ms. Fumiko Yano of our laboratory for her helpful discussions concerning our XPS data.

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  1. Central Research Laboratory, Hitachi Limited, Kokubunji, Tokyo, 185, Japan

    Keiko Kushida-Abdelghafar, Kazuyoshi Torii, Shinichiro Takatani, Yuichi Matsui & Yoshihisa Fujisaki

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  1. Keiko Kushida-Abdelghafar
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  2. Kazuyoshi Torii
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  3. Shinichiro Takatani
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  4. Yuichi Matsui
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  5. Yoshihisa Fujisaki
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Kushida-Abdelghafar, K., Torii, K., Takatani, S. et al. Mechanism of TiN barrier-metal oxidation in a ferroelectric random access memory. Journal of Materials Research 13, 3265–3269 (1998). https://doi.org/10.1557/JMR.1998.0443

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  • DOI: https://doi.org/10.1557/JMR.1998.0443

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