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Donor doping of Ga in ZnO varistor grain boundary

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Abstract

The effect of Ga doping on the grain boundary properties of a ZnO varistor has been presented in this note. Within the range of doping level studied, it is shown that Ga acts as a donor at the grain boundary and behaves similar to that of Al.1 The grain boundary doping behavior of both Ga and Al, when acting as donors, can therefore be represented by the same defect model.

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References

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Author notes

  1. Tapan K. Gupta

    Present address: Electronic Systems Group, Westinghouse Electric Corp., P.O. Box 746, Mail Stop 338, Baltimore, Maryland, 21203, USA

Authors and Affiliations

  1. Alcoa Technical Center, Alcoa Center, Pennsylvania, 15069, USA

    Tapan K. Gupta

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  1. Tapan K. Gupta
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Gupta, T.K. Donor doping of Ga in ZnO varistor grain boundary. Journal of Materials Research 9, 2213–2215 (1994). https://doi.org/10.1557/JMR.1994.2213

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  • DOI: https://doi.org/10.1557/JMR.1994.2213

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