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Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications

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Abstract

A 70-nm-thick, 19-μΩ · cm TiSi2 layer is formed using a Ti-ion implantation technique. TiN/TiSi2 double layers, whose surface morphology is superior to that obtained with conventional deposition and reaction techniques, can also be simultaneously formed by Ti-ion implantation into monocrystalline Si screened with the Si3N4 film. Discrete pn-junction diodes with a shallow TiSi2 layer and Ti-polycide-gate MOS capacitors are fabricated to determine the influences of Ti-ion implantation on electrical characteristics. The leakage current of the B-doped p+n junction and As/P-doped n+p junction with Ti-ion implanted silicide layer is low enough for device applications. Silicide formation on the gate polycrystalline-Si does not affect the breakdown electric field strength of a 20-nm-thick gate oxide. MOS capacitors showed normal C-V characteristics.

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Authors and Affiliations

  1. NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi, 243-01, Japan

    Yasuhisa Omura, Hiroshi Inokawa & Katsutoshi Izumi

Authors
  1. Yasuhisa Omura
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  2. Hiroshi Inokawa
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  3. Katsutoshi Izumi
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Omura, Y., Inokawa, H. & Izumi, K. Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications. Journal of Materials Research 6, 1238–1247 (1991). https://doi.org/10.1557/JMR.1991.1238

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  • DOI: https://doi.org/10.1557/JMR.1991.1238

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