Recently, high-speed searching for the most similar reference data out of the database is needed for data compression, image recognition, network control, and others. However, it takes much time to search for data with software, or hardware using conventional memory. Associative memory has been developed as a high-speed searching device. In this paper, we propose a minimum Hamming distance search associative memory using neuron CMOS inverters. The proposed associative memory is less affected by initial charge and a change of threshold voltage of neuron MOS transistors than conventional neuron CMOS circuits. The proposed circuit also makes searching speed higher by using fully parallel processing. We confirmed that the proposed circuit can be realized expected results by simulation, and experiment using test chip.