http://dx.doi.org/10.15222/TKEA2019.3-4.03

UDC 625.315.592

Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications

Druzhinin A. O., Khoverko Yu. M., Ostrovskii I. P., Liakh-Kaguy N. S., Pasynkova O. A.

Keywords: InSb whiskers, gauge factor, magnetoresistance, sensor.

The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF_4.2K ≈ 72 for the charge carrier concentration of 2·10¹⁷ сm^–3, while being GF_4.2K ≈ 47 for the concentration of 6·10¹⁷ сm^–3, at ε = –3·10^–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.

Ukraine, Lviv Polytechnic National University, Poland, Wroclaw, Institute of Low Temperature and Structure Research PAS.

Cite the article as:: Druzhіnin A. O., Khoverko Yu. M., Ostrovskii I. P., Liakh-Kaguy N. S., Pasynkova O. A. Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications. Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2019, no. 3-4, pp. 3–9. http://dx.doi.org/10.15222/TKEA2019.3-4.03.