2009 年 34 巻 1 号 p. 63-65
(100)-oriented epitaxial Fe3Si films grown (100) Si substrates with an epitaxial magnesia (MgO) buffer layer by rf-magnetron sputtering. X-ray pole figure measurements revealed that the Fe3Si layer is epitaxially grown on MgO buffer layer with an orientation relationship of Fe3Si(100) // MgO(100) with Fe3Si[011] // MgO[001]. The coercive forces (Hc) of epitaxial films was approximately 60 Oe, and the saturation magnetizations (Ms) was 750 emu/cm3.