Two-dimensional (2D) materials, including graphene, hexagonal boron nitrides, transition metal dichalcogenides (TMDs), and their heterostructures, have recently attracted a great deal of attention. Various 2D materials can respond to external stimuli differently, which leads to novel physical properties and possible high-performance device applications. To push forward the 2D-material-based science and technology, application of advanced thin-film growth techniques, such as molecular beam epitaxy, is indispensable. In this paper, I focus on the present status and future prospects of MBE growth of TMDs.