Surface plasmon polariton amplification in metal semiconductor structures

We propose a novel scheme of surface plasmon polariton (SPP) amplification that is based on a minority carrier injection in a Schottky diode. This scheme uses compact electrical pumping instead of bulky optical pumping. Compact size and a planar structure of the proposed amplifier allow one to utilize it in integrated plasmonic circuits and couple it easily to passive plasmonic devices. Moreover, this technique can be used to obtain surface plasmon lasing.


OUTLINE
• Modern Electronics  Twin-Wire Line Model

Is is possible to propose a novel approach?
Requirements: -More compact -The same bandwidth -The same delays CMOS integrated silicon nanophotonics gives silicon nanophotonics devices a possibility to share the same silicon layer with silicon transistors and design On-Chip and Chip-to-Chip interconnects.• and many other papers 14 High propagation losses due to Joule heating restrict the application of SPPs.Thus, one should increase the SPP propagation length, i.e. partially or fully compensate Joule losses.This can be done by using an active media placed near a metal surface.In recent years, a number of paper devoted to the SPP amplification have been published Is it possible to design a COMPACT SPP waveguide with NEGLIGIBLY SMALL LOSSES?

Active Plasmonic Waveguide
Recently, we have proposed a novel scheme of SPP amplification that is based on a minority carrier injection in a metal-semiconductor diode.This scheme uses a compact electrical pumping instead of a bulky optical one.Moreover, the proposed technique can be used to obtain surface plasmon lasing and design spasers, actually nanoscale coherent light sources.
We answer YES!
and memory interface width is 384-bit, i.e. 0.5 GB/s per line One executes 1.44x10 12 float point operations per second.After each 1-5 operations, one have to write or read information or transmit data to another core.So, the required bandwidth is 200-1000 GB/s.
D.Yu.Fedyanin, A.V. Arsenin, Surface plasmon polariton amplification in metal semiconductor structures, Opt.Express, Vol. 19, No. 13, pp.1252412531 (2011) D.Yu.Fedyanin, A.V. Arsenin, Surface plasmon polariton amplification in metal semiconductor structures, Opt.Express 19, 1252412531 (2011) metal work function Ψ M exceeds χ e +E g /2, where χ e and E g are the electron affinity and the band gap of the semiconductor, respectively.In this case,an inversion layer is formed.Under forward bias, holes are injected into the bulk of the semiconductor and recombine with electrons, that results in light emission.So, Schottky barriers can be used to design efficient and compact light-and plasmon-emitting diodes, but what about lasers and amplifiers?To design a laser, one should satisfy the condition for net stimulated emission or gain K.W. Nill, A.R. Calawa, T. C. Harman and J.N. Walpole, Laser mission from metal semiconductor barriers on PbTe and Pb 0.8 Sn 0.2 Te, Appl.Phys.Lett.16, 375 (1970).D.Yu.Fedyanin and A.V. Arsenin, Semiconductor surface plasmon amplifier Based on a Schottky barrier diode, AIP Conf.Proc.1291, 112 (2010).