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Conferences > OFC > 2017 > W3E > W3E.1

Heterogeneously Integrated InP/Si Metal-oxide-semiconductor Capacitor Mach-Zehnder Modulator

Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, and Shinji Matsuo

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Abstract

We have developed a Mach-Zehnder modulator using a 700-m-long heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor. It exhibits VπL and insertion loss of 0.41 Vcm and 1.0 dB, respectively. We also demonstrate 25-Gbit/s NRZ signal modulation.

© 2017 Optical Society of America

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