Synthesis and properties of germanium nanowires

Dunwei Wang

doi:10.1351/pac200779010055

Publicly Available Published by De Gruyter January 1, 2009

Synthesis and properties of germanium nanowires

Dunwei Wang

From the journal Pure and Applied Chemistry

https://doi.org/10.1351/pac200779010055

As a promising electronic material, Ge nanowire (GeNW) has attracted much attention for its low band gaps, high mobilities, and unprecedented dimensions. This article reviews recent research and advancement on this topic and summarizes many aspects of GeNWs, including preparation, surface chemistry, physical properties, functional devices, and controlled assembly. It is shown that GeNWs can be readily synthesized by chemical methods and their electronic properties are comparable or superior to that of the bulk counterparts. Studies of surface chemistry have revealed dominant roles of surfaces on nanowires, and this result led to successful passivations toward air-stable, high-performance functional devices. Finally, controlled assembly to organize chemically synthesized nanowires into functional structures is discussed. Doors are opened up to widely utilize this novel material as excellent electronic building blocks.

Keywords: assembly; chemical vapor deposition; field effect transistors; nanowires; surface chemistry

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Online erschienen: 2009-1-1

Erschienen im Druck: 2007-1-1

Synthesis and properties of germanium nanowires

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