Abstract
II-VI group compound semiconductors such as CdS, CdSe, and CdTe nanowire arrays have been prepared by direct current electrodeposition in porous anodic aluminum oxide template from nonaqueous electrolyte. SEM and TEM results show that these nanowires have a highly anisotropic structure of aligned nanowires with diameters of 15-200 nm, which are consistent with the diameters of the templates used. Electron diffraction and HREM investigations demonstrate that the crystalline structures of these nanowires are uniform hexagonal single crystal. This approach can be used to fabricate single crystal nanowire arrays of a wide range of semiconductors and other materials.
Conference
Workshop on Advanced Material (WAM1: Nanostructured Systems), Workshop on Advanced Materials, WAM, Advanced Materials, Hong Kong, China, 1999-07-14–1999-07-18
© 2013 Walter de Gruyter GmbH, Berlin/Boston
