主催: 一般社団法人 日本機械学会
会議名: 第10回マイクロ・ナノ工学シンポジウム
開催日: 2019/11/19 - 2019/11/21
In this research, we observed the change in thermal and electrical properties of HPT (High Pressure Torsion) processed silicon wafer and powder. HPT is one of the Severe Plastic Deformation (SPD) processes. HPT processed sample has structure distribution because of the introduced strain which depends on the distance from center of the sample. In our findings, we observed a decrease in the thermal conductivity of HPT silicon by approximately one order after the process. This reduction is caused by the formation of nanograin boundaries and metastable phases Si-III and Si-XII which show effects of phonon scattering. However, the large change in Seebeck coefficient by HPT was not observed and we have not detected whether this change results from the structure distribution or not.
