ノート
イオンビーム照射ポリフッ化ビニリデン薄膜のエッチング挙動— エッチング前処理・照射イオン効果の検討
2008 年 65 巻 3 号 p. 273-276
詳細
2008 年 65 巻 3 号 p. 273-276
Poly(vinylidene fluoride) thin films irradiated with four kinds of ion beams were exposed to a 9 M KOH aqueous solution after their storage in air for 30 or 90 days at different temperatures. According to the conductometry, the heating at 120°C was found to enhance the etch rate in the latent track without changing that in the bulk, thereby enabling us to obtain very high etching sensitivity for the preparation of nano-sized through-pores. The formation of hydroperoxides during this pretreatment should facilitate the introduction of the etching agent to improve etchability. Additionally, the irradiation of higher-LET ions, causing each track to contain more activated sites (like radicals), was preferable to achieve high sensitivity of the etching.
