Brought to you by:

Coulomb drag and high-resistivity behavior in double-layer graphene

, and

Published 6 June 2011 • Europhysics Letters Association
, , Citation N. M. R. Peres et al 2011 EPL 95 18001 DOI 10.1209/0295-5075/95/18001

Download Article PDF

Article metrics

742 Total downloads

Share this article

Author affiliations

1 Department of Physics and Center of Physics, University of Minho - P-4710-057, Braga, Portugal, EU

2 Academy of Sciences of Lisbon - R. Academia das Ciências 19, P-1249-122 Lisboa, Portugal, EU

3 CFP and Departamento de Física, Faculdade de Ciências Universidade do Porto - P-4169-007 Porto, Portugal, EU

4 Graphene Research Centre and Physics Department, National University of Singapore - 2 Science Drive 3, Singapore 117541

5 Department of Physics, Boston University - 590 Commonwealth Avenue, Boston, MA 02215, USA

Dates

  1. Received 3 May 2011
  2. Accepted 23 May 2011
  3. Published
Journal RSS
Sign up for new issue notifications
0295-5075/95/1/18001

Abstract

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates.

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
Please wait… references are loading.
10.1209/0295-5075/95/18001