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Conductivity maximum at low temperatures in metallic Si:P near the metal-insulator transition

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1996 EDP Sciences
, , Citation A. Blaschette et al 1996 EPL 36 527 DOI 10.1209/epl/i1996-00264-2

0295-5075/36/7/527

Abstract

High-resolution measurements of the electrical conductivity σ(T) below T = 1 K of uncompensated Si:P with P concentration N above the critical concentration Nc are reported. In a narrow N range, roughly 10% above Nc, σ(T) actually exhibits a shallow maximum which rapidly shifts to higher T with decreasing N. These features, as well as the strong shift of the maxima towards higher T with magnetic field, are interpreted in terms of the suppression of the triplet particle-hole channel in the electron-electron interaction, arising from spin-flip scattering due to local magnetic moments.

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10.1209/epl/i1996-00264-2