Abstract
In situ X-ray reflectometry, grazing-incidence X-ray absorption spectroscopy and simultaneous electrical resistivity measurements were used to investigate the microstructure of (5.9±0.1) nm thick bismuth films quench condensed at (20±1) K onto float-glass substrates. A subsequent annealing process induces an irreversible transformation of the film structure from an amorphous to a highly disordered nanocrystalline structure above (42±2) K. This transformation is accompanied by an irreversible increase of the film resistivity by a factor of more than 2.7. Different negative temperature coefficients of resistance were found directly after deposition and after the annealing process. No changes of the film density, which is always less than the density of the bulk material, or of the film roughness, are observed as a result of the heat treatment.