Metal Free Growth of Graphene on Quartz Substrate Using Chemical Vapor Deposition (CVD)
Graphene was grown on (0001) quartz substrate (z-cut) using catalyst free Chemical Vapor Deposition (CVD). Methane was used as a carbon source and hydrogen was introduced independently to optimize the growth. The effect of growth temperature was investigated while varying the temperature
between 1000 and 1300 °C. With an optimized condition, a thin (≤2 mono-layer) continuous graphene film was grown as confirmed by Raman spectroscopy, optical transmission, and electrical measurements. The best quality film showed the Raman D-peak to G-peak intensity ratio
of ∼0.8 with the 2D-peak width of ∼60 cm−1. High resolution X-ray Photoelectron Spectroscopy (XPS) revealed that the grown graphene is slightly oxidized but there is no detectable Si—C chemical bond in the graphene/quartz system. Hall effect measurements exhibited
a carrier mobility of ∼400 cm2/V·s with a sheet carrier density of ∼ 5 × cm−2.
Document Type: Research Article
Publication date: 01 April 2014
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