Analytical Approach to Model Distributions of Concentrations of Charge Carriers in a Diffusive-Junction Rectifiers with Optimized Distributions of Dopants

It has been recently shown, that manufacturing a diffusion-junction rectifier in a multilayer structure at optimal relation between annealing time, materials and thicknesses of layers of the structure gives us possibility to increase sharpness of p–n-junctions and to increase homogeneity of dopant distribution in enriched area. In this paper we estimate distributions of concentrations of charge carriers in the p–n-junction. At the same time we introduce an analytical approach to estimate the distributions. The approach gives us possibility to take into account spatiotemporal variations of properties of materials and several effects at one tine (diffusion of charge carriers etc.), which recently have taken into account independently from each other.