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Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

Published online by Cambridge University Press:  06 March 2012

Tieying Yang ,
Xiubo Qin ,
Huan-hua Wang ,
Quanjie Jia ,
Runsheng Yu ,
Baoyi Wang ,
Jiaou Wang ,
Kurash Ibrahim  and
Xiaoming Jiang
Tieying Yang*
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Xiubo Qin
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Huan-hua Wang*
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Quanjie Jia
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Runsheng Yu
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Baoyi Wang
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Jiaou Wang
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Kurash Ibrahim
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Xiaoming Jiang
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
*
a)Author to whom correspondence should be addressed. Electronic mail: yangty@ihep.ac.cn
b)Electronic mail: wanghh@ihep.ac.cn
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Abstract

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

Keywords

p-type transparent conducting oxideGa-doped SnO2 thin filmreactive rf-magnetron sputteringmicrostructureX-ray diffractionX-ray specular reflectivity
Type
Technical Articles
Information
Powder Diffraction , Volume 25 , Supplement S1 , September 2010 , pp. S36 - S39
Copyright
Copyright © Cambridge University Press 2010

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