Abstract
The fabrication of SiOx/SiO2 superlattices combined with thermal annealing enables the size and density control of Si quantum dots. The layered-arranged Si quantum dots represent a model system to systematically study the photonic and electronic properties of indirect gap quantum dots prepared in a CMOS compatible way. Hence, the model system is used to understand the interplay of absorption and recombination, the carrier kinetics and the electronic transport properties for matrix embedded Si quantum dots. The interplay of radiative and non-radiative recombination will be discussed for high quantum yield. Doping of Si quantum dots and the respective quantification is at the limit of the respective high resolution techniques but clearly show the effect of self-purification. The effect of an externally applied electric field on exciton separation and carrier transport will be discussed..