Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]

Wan Gee Kim; Min Gyu Sung; Sook Joo Kim; Jong Hee Yoo; Te One Youn; Jang Won Oh; Jung Nam Kim; Byung Gu Gyun; Taeh Wan Kim; Chi Ho Kim; Jun Young Byun; Won Kim; Moon Sig Joo; Jae Sung Roh; Sung Ki Park

doi:10.1149/1.3569824

Journal of The Electrochemical Society

Publisher's Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO₂, ZrO₂, and HfO₂ [J. Electrochem. Soc., 158, H417 (2011)]

Wan Gee Kim¹, Min Gyu Sung¹, Sook Joo Kim¹, Jong Hee Yoo¹, Te One Youn¹, Jang Won Oh¹, Jung Nam Kim¹, Byung Gu Gyun¹, Taeh Wan Kim¹, Chi Ho Kim¹, Jun Young Byun¹, Won Kim¹, Moon Sig Joo¹, Jae Sung Roh¹ and Sung Ki Park¹

Published 15 March 2011 • © 2011 ECS - The Electrochemical Society
Journal of The Electrochemical Society, Volume 158, Number 5 Citation Wan Gee Kim et al 2011 J. Electrochem. Soc. 158 S12 DOI 10.1149/1.3569824

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¹ Hynix Semiconductor, Inc., Research and Development Division, Bubal-eub, Ichon-si, Kyoungki-do 467-701, Korea

Dates

Received 3 April 2011
Revised 3 April 2011
Published 15 March 2011

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This article was originally published on February 25, 2011, with the wrong Fig. 6 on page H420. The error was corrected on March 2, 2011, and is correct in the printed version of the Journal.