Abstract
In order to meet strong demands for precise analysis in metal gate/high-k dielectrics stack structures, we have developed high resolution photoelectron spectroscopy techniques using synchrotron radiation. We have succeeded in analyzing precise chemical-state-resolved in-depth profiles of gate electrode/dielectric multilayer/ Si structures from both front and back sides by angle-resolved photoelectron spectroscopy and maximum entropy method. Furthermore, pin-point nano-scale in-depth analysis using scanning photoelectron microscopy with sub 100 nm SR beam revealed the local formation of the intermixed region having silicide. Finally, non-destructive defect analysis using irradiation time-dependent photoelectron spectroscopy enabled us to analyze trapped charge and fixed charge.